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Datasheet IRG4PC60F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRG4PC60F | INSULATED GATE BIPOLAR TRANSISTOR
PD - 94442
IRG4PC60F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Industry |
International Rectifier |
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2 | IRG4PC60F-PPBF | INSULATED GATE BIPOLAR TRANSISTOR
PD - 95567
IRG4PC60F-PPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Solder |
International Rectifier |
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1 | IRG4PC60FPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95566A
IRG4PC60FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
Industry s |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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