Datasheet IRG4PC30UPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG4PC30UPBF	INSULATED GATE BIPOLAR TRANSISTOR PD - 94923 IRG4PC30UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Gene	International Rectifier

IRG4PC30U Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG4PC30UD	INSULATED GATE BIPOLAR TRANSISTOR PD 91462B IRG4PC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution a	International Rectifier
IRG4PC30U	INSULATED GATE BIPOLAR TRANSISTOR PD 91461E IRG4PC30U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation	International Rectifier
IRG4PC30UPBF	INSULATED GATE BIPOLAR TRANSISTOR PD - 94923 IRG4PC30UPbF INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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