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Datasheet IRG4BC40U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRG4BC40U | HEXFET Power MOSFET PD - 91456E
IRG4BC40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry st |
 International Rectifier |
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| 1 | IRG4BC40UPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 95428
IRG4BC40UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry sta |
International Rectifier |
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