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Datasheet IRG4BC30U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRG4BC30U | INSULATED GATE BIPOLAR TRANSISTOR PD - 91452E
IRG4BC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry st |
 International Rectifier |
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| 2 | IRG4BC30U-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91803
IRG4BC30U-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry s |
International Rectifier |
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| 1 | IRG4BC30UD | INSULATED GATE BIPOLAR TRANSISTOR PD 91453B
IRG4BC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency |
International Rectifier |
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