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Datasheet IRG4BC30S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRG4BC30S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91593A
IRG4BC30S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB |
International Rectifier |
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1 | IRG4BC30S-S | INSULATED GATE BIPOLAR TRANSISTOR PD - 94069
IRG4BC30S-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tight parameter distribution and high efficiency
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ |
International Rectifier |
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