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Datasheet IRG4BC30FD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRG4BC30FD | INSULATED GATE BIPOLAR TRANSISTOR PD -91451B
IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency |
 International Rectifier |
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| 3 | IRG4BC30FD-S | INSULATED GATE BIPOLAR TRANSISTOR
PD - 96929
IRG4BC30FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
C
Fast CoPack IGBT
VCES = 600V
Features
Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parame |
International Rectifier |
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| 2 | IRG4BC30FD1 | INSULATED GATE BIPOLAR TRANSISTOR PD - 94773
IRG4BC30FD1
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
C
Features
Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficie |
International Rectifier |
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| 1 | IRG4BC30FDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 94938A
IRG4BC30FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast CoPack IGBT
Features
Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution a |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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