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Datasheet IRG4BC20KD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRG4BC20KD | INSULATED GATE BIPOLAR TRANSISTOR PD -91599A
IRG4BC20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter dis |
 IRF |
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| 3 | IRG4BC20KD-S | INSULATED GATE BIPOLAR TRANSISTOR PD -91598A
IRG4BC20KD-S
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • G |
IRF |
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| 2 | IRG4BC20KD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -95677
IRG4BC20KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
RECOVERY DIODE Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter d |
 International Rectifier |
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| 1 | IRG4BC20KDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD -94907
IRG4BC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Features
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides tighter parameter d |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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