|
|
Datasheet IRG4BC10KDPBF Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IRG4BC10KDPBF | HEXFET Power MOSFET PD -94903
IRG4BC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losse |
International Rectifier |
IRG4BC10KD Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IRG4BC10KD | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
|
IRG4BC10KDPBF | HEXFET Power MOSFET |
International Rectifier |
Esta página es del resultado de búsqueda del IRG4BC10KDPBF. Si pulsa el resultado de búsqueda de IRG4BC10KDPBF se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |