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Datasheet IRFZ48N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | IRFZ48N | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit |
International Rectifier |
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6 | IRFZ48N | N-channel enhancement mode TrenchMOS transistor Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has i |
NXP Semiconductors |
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5 | IRFZ48NL | (IRFZ48NL / IRFZ48NS) Advanced Process Technology PD - 9.1408B
Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
IRFZ48NS IRFZ48NL
VDSS = 55V RDS(on) = 0.014Ω
Advanced HEXFET ® Power MOSFETs |
International Rectifier |
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4 | IRFZ48NLPBF | HEXFET Power MOSFET l l l l l l l
Description
Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
G
IRFZ48NSPbF IRFZ48NLPbF
D
PD - 95125
HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.014Ω ID = 64A
S
A |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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