Datasheet IRFZ44NSPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFZ44NSPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achiev	International Rectifier

IRFZ44NS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFZ44NS	(IRFZ44NL / IRFZ44NS) Power MOSFET PD - 94153 Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRFZ44NS IRFZ44NL HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175Ω Advanced HEXF	International Rectifier
IRFZ44NS	N-channel enhancement mode TrenchMOS transistor Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features v	NXP Semiconductors
IRFZ44NSPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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