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Datasheet IRFZ44N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRFZ44N | 55V, 49A, HEXFET Power MOSFET PD - 94053
IRFZ44N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 17.5mΩ
G S
ID = 49A
Description
Advanced HEXFET® Power MOSFETs from Interna |
 International Rectifier |
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| 10 | IRFZ44N | 49A, 55V, N-channel Enhancement Mode TrenchMOS Transistor
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state |
 NXP Semiconductors |
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| 9 | IRFZ44N | Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
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| 8 | IRFZ44N | N-CHANNEL Power MOSFET APPLICATION
Buck Converter High Side Switch DC motor control , Ups ...etc , & other Application
VDSS 55V
RDS(ON) Max. 17.5mȍ
PIN CONFIGURATION
TO-220 Front View
ID 50A
IRFZ44N
N-CHANNEL Power MOSFET
FEATURES
Ultra Low ON Resistance Low Gate Charge Dynamic dv/dt Rating Induc |
 Matsu |
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