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Datasheet IRFY430 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRFY430 | N-Channel MOSFET
IRFY430M IRFY430M
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92
10.41 10.67
N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on)
0.89 1.14
16.38 16.89
13.39 13.64
1 2 3
12.70 19.05
500V 3.7A 1.6W
2.54 BSC
2. |
Seme LAB |
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4 | IRFY430C | N-Channel MOSFET
IRFY430C
Dimensions in mm (inches).
10.6 (0.42) 0.8 (0.03) 4.6 (0.18)
16.5 (0.65)
3.70 Dia. Nom
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.
1.5(0.53)
10.6 (0.42)
1 2 3
12.70 (0.50 min)
VDSS = 500V ID = 4.5A RDS(ON) = 1.5Ω
All Semelab hermetically s |
Seme LAB |
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3 | IRFY430CM | POWER MOSFET N-CHANNEL Provisional Data Sheet No. PD 9.1291B
HEXFET® POWER MOSFET
IRFY430CM
N-CHANNEL
500 Volt, 1.5Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance c |
International Rectifier |
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2 | IRFY430M | N-Channel MOSFET
IRFY430M IRFY430M
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92
10.41 10.67
N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on)
0.89 1.14
16.38 16.89
13.39 13.64
1 2 3
12.70 19.05
500V 3.7A 1.6W
2.54 BSC
2. |
Seme LAB |
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Número de pieza | Descripción | Fabricantes | |
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