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Datasheet IRFY240CM Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFY240CM   POWER MOSFET N-CHANNEL

Provisional Data Sheet No. PD 9.1289B HEXFET® POWER MOSFET IRFY240CM N-CHANNEL 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance
International Rectifier
International Rectifier		 datasheet IRFY240CM pdf

IRFY24 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFY240

N-CHANNEL POWER MOSFET

IRFY240 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 200V 12A 0.19Ω 10.
 Seme LAB
Seme LAB		 datasheet pdf - Seme LAB
IRFY240C

N-CHANNEL POWER MOSFET

IRFY240C Dimensions in mm (inches). 10.6 (0.42) 0.8 (0.03) 4.6 (0.18) 16.5 (0.65) 3.70 Dia. Nom N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 1.5(0.53) 10.6 (0.42) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 16A RDS(ON) = 0.18Ω All Se
 Seme LAB
Seme LAB		 datasheet pdf - Seme LAB
IRFY240CM

POWER MOSFET N-CHANNEL

Provisional Data Sheet No. PD 9.1289B HEXFET® POWER MOSFET IRFY240CM N-CHANNEL 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low
International Rectifier
International Rectifier		 datasheet pdf - International Rectifier


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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