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Datasheet IRFY240 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFY240 | N-CHANNEL POWER MOSFET
IRFY240
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81
10.41 10.67
N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
0.89 1.14
16.38 16.89
13.39 13.64
1 2 3
12.70 19.05
200V 12A 0.19Ω
10.41 10.92
2.54 BSC
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 Seme LAB |
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| 2 | IRFY240C | N-CHANNEL POWER MOSFET
IRFY240C
Dimensions in mm (inches).
10.6 (0.42) 0.8 (0.03) 4.6 (0.18)
16.5 (0.65)
3.70 Dia. Nom
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.
1.5(0.53)
10.6 (0.42)
1 2 3
12.70 (0.50 min)
VDSS = 200V ID = 16A RDS(ON) = 0.18Ω
All Semelab hermetically s |
Seme LAB |
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| 1 | IRFY240CM | POWER MOSFET N-CHANNEL Provisional Data Sheet No. PD 9.1289B
HEXFET® POWER MOSFET
IRFY240CM
N-CHANNEL
200 Volt, 0.18Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance |
 International Rectifier |
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