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Datasheet IRFW624A Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFW624A   Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 IRFW/I624A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.742Ω (Typ.) Absolute Maximum R
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet IRFW624A pdf

IRFW6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFW644B

N-Channel MOSFET

IRFW644B / IRFI644B November 2001 IRFW644B / IRFI644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially ta
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
IRFW630A

Power MOSFET ( Transistor )

     )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUH
 Samsung
Samsung		 datasheet pdf - Samsung
IRFW620B

N-Channel MOSFET

IRFW620B / IRFI620B November 2001 IRFW620B / IRFI620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially ta
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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