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Datasheet IRFU9310 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFU9310 | Power MOSFET ( Transistor ) PD 9.1663
PRELIMINARY
l l l l l l
IRFR/U9310
HEXFET® Power MOSFET
D
P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS = -400V
G S
RDS(on) = 7.0Ω ID = -1.8A
Description
Third Generation HEXFETs from International |
 IRF |
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| 2 | IRFU9310 | Power MOSFET ( Transistor ) IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 400 VGS = - 10 V
13 3.2 5.0 Single
7.0
DPAK (TO-252)
D
IPAK (TO-251)
D
GS
GD S
S G
D P-Channel MOSFET
FEATURES
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 Vishay Siliconix |
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| 1 | IRFU9310PBF | Power MOSFET ( Transistor ) PD - 95064A
P-Channel Surface Mount (IRFR9310) l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRFR9310PbF IRFU9310PbF
D
HEXFET® Power MOSFET VDSS = -400V RDS(on) = 7.0Ω
S
G
ID = -1.8A
Third Generation HEXFETs fro |
 International Rectifier |
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