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Datasheet IRFU9024 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRFU9024 | (IRFU9020 / IRFU9024) P-Channel Power MOSFETS |
 Samsung Electronics |
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| 6 | IRFU9024 | Power MOSFET ( Transistor ) |
 IRF |
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| 5 | IRFU9024 | Power MOSFET ( Transistor ) IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 60 VGS = - 10 V
19 5.4 11 Single
0.28
S
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel MOSFET
FEATURES
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 Vishay Siliconix |
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| 4 | IRFU9024N | Power MOSFET ( Transistor ) PD - 9.1506
PRELIMINARY
l l l l l l l
IRFR/U9024N
HEXFET® Power MOSFET
D
Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS = -55V RDS(on) = 0.175Ω
G S
ID = -11A
Description
Fifth Gener |
IRF |
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