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Datasheet IRFU410 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 17 | IRFU410 | 1.5A / 500V / 7.000 Ohm / N-Channel Power MOSFETs IRFR410, IRFU410
Data Sheet July 1999 File Number
3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th |
 Intersil |
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| 16 | IRFU410 | N-Channel Power MOSFETs
IRFR410, IRFU410
Data Sheet July 1999 File Number
3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified |
 Intersil Corporation |
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| 15 | IRFU4104 | Power MOSFET(Vdss=40V / Rds(on)=5.5mohm / Id=42A) PD - 94728
AUTOMOTIVE MOSFET
IRFR4104 IRFU4104
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 40V
G S
RDS(on) = 5.5mΩ ID = 42A
Description
Sp |
 International |
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| 14 | IRFU4104 | Power MOSFET ( Transistor )
PD - 94728
AUTOMOTIVE MOSFET
IRFR4104 IRFU4104
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 40V
G S
RDS(on) = 5.5mΩ ID |
 International Rectifier |
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