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Datasheet IRFSZ40 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFSZ40   N-Channel Power MOSFET / Transistor

Samsung
Samsung
datasheet IRFSZ40 pdf

IRFS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFS630A

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) 1 IRFS630A BVDSS = 200 V RDS(on) =
Fairchild
Fairchild
datasheet pdf - Fairchild
IRFS630B

200V N-Channel MOSFET

IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on
Fairchild
Fairchild
datasheet pdf - Fairchild
IRFS634A

Advanced Power MOSFET

Samsung Electronics
Samsung Electronics
datasheet pdf - Samsung Electronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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