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Datasheet IRFSL38N20DPBF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFSL38N20DPBF | Power MOSFET ( Transistor )
Applications High frequency DC-DC converters Plasma Display Panel
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS
to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current |
 Infineon |
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| 1 | IRFSL38N20DPBF | HEXFET Power MOSFET PROVISIONAL
PD - 97001A
SMPS MOSFET
Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF
HEXFET® Power MOSFET
Key Parameters
VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 200 260 54 175 V V m: °C
Benefits Low Gate-to- |
 International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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