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Datasheet IRFS730 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRFS730 | N-CHANNEL MOSFET IRFS730
Rev.D Mar.-2016
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching.
用途 / Applications
用于高� |
 BLUE ROCKET ELECTRONICS |
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| 4 | IRFS730 | N-Channel MOSFET STB141NF55 - STB141NF55-1 STP141NF55
N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
Features
Type STB141NF55 STB141NF55-1 STP141NF55 VDSS 55V 55V 55V RDS(on) <0.008Ω <0.008Ω <0.008Ω ID (1) 80A 80A 80A
3 1 2
1. Current limited by package
3 1
3 12
Descri |
 LZG |
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| 3 | IRFS730A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS730A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power suppli |
 Inchange Semiconductor |
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| 2 | IRFS730A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
IRFS730A
BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3.9 A
TO-220F
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower |
 Fairchild Semiconductor |
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