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Datasheet IRFS38N20D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFS38N20D | Power MOSFET ( Transistor ) PD - 94358
SMPS MOSFET
IRFB38N20D IRFS38N20D IRFSL38N20D
HEXFET® Power MOSFET
l
Applications High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.054Ω
ID
44A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simpl |
 IRF |
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| 2 | IRFS38N20DPbF | Power MOSFET ( Transistor )
Applications High frequency DC-DC converters Plasma Display Panel
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS
to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current |
 Infineon |
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| 1 | IRFS38N20DPBF | HEXFET Power MOSFET PROVISIONAL
PD - 97001A
SMPS MOSFET
Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF
HEXFET® Power MOSFET
Key Parameters
VDS VDS (Avalanche) min. RDS(ON) max @ 10V TJ max 200 260 54 175 V V m: °C
Benefits Low Gate-to- |
 International Rectifier |
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