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Datasheet IRFR9310 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
3 IRFR9310   Power MOSFET ( Transistor )

PD 9.1663 PRELIMINARY l l l l l l IRFR/U9310 HEXFET® Power MOSFET D P-Channel Surface Mount (IRFR9310) Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -400V G S RDS(on) = 7.0Ω ID = -1.8A Description Third Generation HEXFETs from International
IRF
IRF
datasheet IRFR9310 pdf
2 IRFR9310   Power MOSFET ( Transistor )

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 400 VGS = - 10 V 13 3.2 5.0 Single 7.0 DPAK (TO-252) D IPAK (TO-251) D GS GD S S G D P-Channel MOSFET FEATURES �
Vishay Siliconix
Vishay Siliconix
datasheet IRFR9310 pdf
1 IRFR9310PBF   Power MOSFET ( Transistor )

PD - 95064A P-Channel Surface Mount (IRFR9310) l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRFR9310PbF IRFU9310PbF D HEXFET® Power MOSFET VDSS = -400V RDS(on) = 7.0Ω S G ID = -1.8A Third Generation HEXFETs fro
International Rectifier
International Rectifier
datasheet IRFR9310PBF pdf


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SPS122

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