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Datasheet IRFR410 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRFR410 | N-Channel Power MOSFETs
IRFR410, IRFU410
Data Sheet July 1999 File Number
3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified |
 Intersil Corporation |
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| 10 | IRFR4104 | Power MOSFET ( Transistor )
PD - 94728
AUTOMOTIVE MOSFET
IRFR4104 IRFU4104
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 40V
G S
RDS(on) = 5.5mΩ ID |
 International Rectifier |
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| 9 | IRFR4104PbF | Power MOSFET ( Transistor ) PD - 95425B
IRFR4104PbF IRFU4104PbF
HEXFET® Power MOSFET
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
D
VDSS = 40V RDS(on) = 5.5mΩ
G S
ID = 42A
Description
This HEXFE |
International Rectifier |
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| 8 | IRFR4105 | Power MOSFET ( Transistor )
PD - 91302C
IRFR/U4105
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.045Ω ID = 27A
Description
Fifth Generation HEXFETs from International Rect |
International Rectifier |
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