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Datasheet IRFR330 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
5 IRFR330   Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 IRFR330 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.765Ω (Typ.) BVDSS = 400 V RDS(o
Fairchild Semiconductor
Fairchild Semiconductor
datasheet IRFR330 pdf
4 IRFR3303   HEXFET Power MOSFET

PD - 9.1642A IRFR/U3303 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description Fifth Generation HEXFETs from Interna
International Rectifier
International Rectifier
datasheet IRFR3303 pdf
3 IRFR3303PBF   HEXFET Power MOSFET

PD - 95070A IRFR3303PbF IRFU3303PbF l l l l l l l Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.031Ω G S Description Fifth Generation HEXFETs
International Rectifier
International Rectifier
datasheet IRFR3303PBF pdf
2 IRFR330A   Power MOSFET ( Transistor )

     )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýý
Samsung
Samsung
datasheet IRFR330A pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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