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Datasheet IRFR2307Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFR2307Z | AUTOMOTIVE MOSFET PD - 96910
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest process |
 International Rectifier |
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| 1 | IRFR2307ZPbF | Power MOSFET ( Transistor ) PD - 96191B
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance |
International Rectifier |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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