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Datasheet IRFR224 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRFR224 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFR224
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.742Ω (Typ.)
BVDSS = 250 V RDS(on) |
 Fairchild Semiconductor |
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| 4 | IRFR224 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 3 | IRFR224 | Power MOSFET ( Transistor ) www.vishay.com
IRFR224, IRFU224, SiHFR224, SiHFU224
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
14 2.7 7.8 Single
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
1.1
GS
GD S
S N-Channel MOSFET
FEATURES
• Dynami |
 Vishay Siliconix |
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| 2 | IRFR224A | Power MOSFET ( Transistor )
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýP$ |
 Samsung |
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| Número de pieza | Descripción | Fabricantes | |
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