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Datasheet IRFR210 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRFR210 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 4 | IRFR210 | Power MOSFET ( Transistor ) www.vishay.com
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
8.2 1.8 4.5 Single
1.5
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
S N-Channel MOSFET
FEATURES
• Dynam |
 Vishay Siliconix |
|
| 3 | IRFR210A | Power MOSFET ( Transistor )
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýP |
 Samsung |
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| 2 | IRFR210B | 200V N-Channel MOSFET IRFR210B / IRFU210B
November 2001
IRFR210B / IRFU210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
 Fairchild Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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