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Datasheet IRFPS3810 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFPS3810 | HEXFET Power MOSFET PD - 93912A
IRFPS3810
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V
G S
RDS(on) = 0.009Ω ID = 170A
Description
The HEXFET® Power MOSFETs from Intern |
 International Rectifier |
 |
| 1 | IRFPS3810PbF | HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lead-Free
G
Description
The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o |
International Rectifier |
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