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Datasheet IRFPS37N50A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFPS37N50A | HEXFET Power MOSFET PD- 91822C
SMPS MOSFET
IRFPS37N50A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Chara |
 International Rectifier |
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| 3 | IRFPS37N50A | Power MOSFET ( Transistor ) IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 46 71 Single
D
FEATURES
500 0.13
• Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV |
 Vishay |
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| 2 | IRFPS37N50APBF | Power MOSFET ( Transistor ) PD- 95142
IRFPS37N50APbF
SMPS MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized |
International Rectifier |
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| 1 | IRFPS37N50APBF | Power MOSFET ( Transistor ) IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 46 71 Single
D
FEATURES
500 0.13
• Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV |
Vishay |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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