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Datasheet IRFPG50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFPG50 | Power MOSFET ( Transistor ) PD - 9.543C
IRFPG50
HEXFET® Power MOSFET
www.irf.com
1
10/29/97
IRFPG50
2
www.irf.com
IRFPG50
www.irf.com
3
IRFPG50
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
10us
I D , Drain Current (A)
10 100us
1ms 1 10ms
0.1
TC = 25 °C TJ = 150 °C Single Pulse
10 100 1000 10000
VDS , Drai |
 International Rectifier |
 |
| 2 | IRFPG50 | Power MOSFET ( Transistor ) Power MOSFET
IRFPG50, SiHFPG50
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
1000 VGS = 10 V
190 23 110 Single
2.0
TO-247AC
D
S
D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rati |
 Vishay |
|
| 1 | IRFPG50PBF | HEXFET Power MOSFET PD - 94806
IRFPG50PbF
HEXFET® Power MOSFET
• Lead-Free
www.irf.com
1
10/31/03
IRFPG50PbF
2
www.irf.com
IRFPG50PbF
www.irf.com
3
IRFPG50PbF
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
10us 10 100us
1ms 1 10ms
0.1
TC = 25 ° C TJ = 150 |
International Rectifier |
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