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Datasheet IRFP440 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | IRFP440 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFP440
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.)
Absolute Maximum Ra |
Fairchild Semiconductor |
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10 | IRFP440 | Power MOSFET ( Transistor ) |
International Rectifier |
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9 | IRFP440 | N-Channel Power MOSFET / Transistor IRFP440
Data Sheet July 1999 File Number
2089.3
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
Intersil Corporation |
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8 | IRFP440 | Power MOSFET ( Transistor ) IRFP440, SiHFP440
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 30 Single
D
FEATURES
500 0.85
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease |
Vishay Siliconix |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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