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Datasheet IRFP264 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRFP264 | Power MOSFET ( Transistor )
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 International Rectifier |
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| 4 | IRFP264 | Standard Power MOSFET - N-Channel Enhancement Mode
Standard Power MOSFET
IRFP 264
VDSS = 250 V ID (cont) = 38 A RDS(on) = 0.075 Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transien |
 IXYS Corporation |
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| 3 | IRFP264 | Power MOSFET ( Transistor ) IRFP264, SiHFP264
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single
D
FEATURES
250 0.075
• • • • • • •
Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Swi |
 Vishay |
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| 2 | IRFP264N | Power MOSFET ( Transistor )
PD - 94214
IRFP264N
HEXFET® Power MOSFET
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Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements
D
VDSS = 250V RDS(on) = 60mΩ
G S
ID = 44A
Description |
International Rectifier |
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