Datasheet IRFP2410 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFP2410	Fourth Generation HEXFETs Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Description Fourth Generation HEXFETs from International Rectifier u	International Rectifier

IRFP2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFP260N	Power MOSFET ( Transistor ) PD - 94004B IRFP260N l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.04Ω G ID = 50A S Description F	International Rectifier
IRFP250N	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP250N FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max) ·Fast Switching DESCRIPTION ·Designed f	Inchange Semiconductor
IRFP250N	Power MOSFET ( Transistor ) PD - 94008A IRFP250N HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements D VDSS = 200V RDS(on) = 0.075Ω G ID = 30A S Description	IRF

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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