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Datasheet IRFP150N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFP150N | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP150N
Features
·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.036Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and re |
 Inchange Semiconductor |
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| 3 | IRFP150N | N-Channel Power MOSFET / Transistor IRFP150N
Data Sheet January 2002
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-247
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Th |
 Fairchild Semiconductor |
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| 2 | IRFP150N | Power MOSFET ( Transistor ) l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit |
 International Rectifier |
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| 1 | IRFP150NPBF | Power MOSFET ( Transistor ) • Lead-Free
PD - 95002
IRFP150NPbF
www.irf.com
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IRFP150NPbF
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IRFP150NPbF
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IRFP150NPbF
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IRFP150NPbF
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IRFP150NPbF
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IRFP150NPbF
TO-247AC Package Outline
Dimensions are shown in millime |
International Rectifier |
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