Datasheet IRFN350 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFN350	POWER MOSFET N-CHANNEL PD - 91551C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) IRFN350 0.315 Ω ID 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of	International Rectifier

IRFN Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFN150	Power MOSFET ( Transistor ) PD - 91547C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) IRFN150 0.07 Ω ID 34A IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier�	International Rectifier
IRFN214B	250V N-Channel MOSFET IRFN214B IRFN214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimi	Fairchild Semiconductor
IRFN3710	TRANSISTOR N-CHANNEL Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1417 REPETITIVE AVALANCHE AND dv/dt RATED IRFN3710 N-CHANNEL HEXFET® TRANSISTOR 100 Volt, 0.028Ω , HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced proce	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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