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Datasheet IRFM150 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFM150   N-CHANNEL POWER MOSFET

LAB MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) SEME 2N7224 IRFM150 N–CHANNEL POWER MOSFET VDSS ID(con
 Seme LAB
Seme LAB		 datasheet IRFM150 pdf

IRFM Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFML8244TRPBF

HEXFET Power MOSFET

PD - 97587A IRFML8244TRPbF VDS VGS Max RDS(on) max (@VGS = 10V) 25 ± 20 24 41 V V m m 6  *  HEXFET® Power MOSFET  ' Micro3TM (SOT-23) IRFML8244TRPbF RDS(on) max (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Low RDS(on) (
International Rectifier
International Rectifier		 datasheet pdf - International Rectifier
IRFM450

Power MOSFET ( Transistor )

PD - 90493F POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM450 IRFM450 JANTX2N7228 JANTXV2N7228 REF: MIL-PRF-19500/592 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.415 Ω ID 12A HEXFET® MOSFET technology is the key to International Rectifier’s
 IRF
IRF		 datasheet pdf - IRF
IRFML8244TRPBF

HEXFET Power MOSFET

Product specification IRFML8244TRPbF VDS VGS Max RDS(on) max (@VGS = 10V) 25 ± 20 24 41 V V m m 6  *  HEXFET® Power MOSFET  ' Micro3TM (SOT-23) IRFML8244TRPbF RDS(on) max (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Low
TY Semiconductor
TY Semiconductor		 datasheet pdf - TY Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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