Datasheet IRFIZ34EPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFIZ34EPBF	HEXFET Power MOSFET PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.042Ω G S ID = 21A Description Fifth Generation HEXFETs from	International Rectifier

IRFIZ34E Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFIZ34E	Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A) PD - 9.1674A IRFIZ34E HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.042Ω G S ID = 21A Description Fifth Generation HEXFE	International Rectifier
IRFIZ34EPBF	HEXFET Power MOSFET PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.042Ω G S ID = 21A Description Fifth Gen	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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