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Datasheet IRFI830 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFI830 | 500V N-Channel MOSFET IRFW830B / IRFI830B
November 2001
IRFW830B / IRFI830B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
 Fairchild Semiconductor |
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| 3 | IRFI830A | Power MOSFET ( Transistor )
)($785(6
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 Samsung |
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| 2 | IRFI830B | 500V N-Channel MOSFET IRFW830B / IRFI830B
November 2001
IRFW830B / IRFI830B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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| 1 | IRFI830G | Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=3.1A) |
 International Rectifier |
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