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Datasheet IRFI740 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRFI740 | Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.4A) |
 International Rectifier |
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| 4 | IRFI740A | Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.437Ω (Typ.)
IRFW/I74 |
 Fairchild Semiconductor |
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| 3 | IRFI740B | 400V N-Channel MOSFET IRFW740B / IRFI740B
November 2001
IRFW740B / IRFI740B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o |
Fairchild Semiconductor |
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| 2 | IRFI740G | Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.4A) |
International Rectifier |
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