|
|
Datasheet IRFI1310N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFI1310N | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A) PD - 9.1611A
PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
IRFI1310N
HEXFET® Power MOSFET
D
VDSS = 100V
G S
RDS(on) = 0.036Ω ID = 24A
Fifth Generation HEXFETs from |
 International Rectifier |
 |
| 2 | IRFI1310NPBF | Power MOSFET ( Transistor )
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve e |
 Infineon |
|
| 1 | IRFI1310NPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis |
International Rectifier |
|
| Esta página es del resultado de búsqueda del IRFI1310N. Si pulsa el resultado de búsqueda de IRFI1310N se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |