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Datasheet IRFI1010N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRFI1010N | Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A) PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.012Ω
G
ID = 49A
S
Description
Fifth Generation HEXFETs from Internation |
International Rectifier |
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1 | IRFI1010NPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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