DataSheet.es    



Datasheet IRFI1010N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 IRFI1010N   Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)

PD - 9.1373A IRFI1010N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from Internation
International Rectifier
International Rectifier
datasheet IRFI1010N pdf
1 IRFI1010NPBF   Power MOSFET ( Transistor )

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r
International Rectifier
International Rectifier
datasheet IRFI1010NPBF pdf


Esta página es del resultado de búsqueda del IRFI1010N. Si pulsa el resultado de búsqueda de IRFI1010N se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


Enlace url :
[1] 

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap