Datasheet IRFHM830PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFHM830PBF	Power MOSFET ( Transistor ) VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 30 V 3.8 mΩ 15 nC 2.5 Ω 40h A Applications • Battery Operated DC Motor Inverter MOSFET IRFHM830PbF HEXFET® Power MOSFET 3.3mm x 3.3mm PQFN Features and Benefits Features Low RDSon (<3.8mΩ) Low Thermal Resistanc	International Rectifier

IRFHM830 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFHM830DTRPbF	HEXFET Power MOSFET IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ nC Ω A 3.3mm x 3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3m	International Rectifier
IRFHM830PBF	Power MOSFET ( Transistor ) VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 30 V 3.8 mΩ 15 nC 2.5 Ω 40h A Applications • Battery Operated DC Motor Inverter MOSFET IRFHM830PbF HEXFET® Power MOSFET 3.3mm x 3.3mm PQFN Features and Benefits Features Low RDSon (<3.8mΩ) L	International Rectifier
IRFHM830DPbF	HEXFET Power MOSFET IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ nC Ω A 3.3mm x 3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • Synchronous MOSFET for Buck Converters Features and Benefits Features Low RDSon (≤ 4.3m	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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