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Datasheet IRFF430 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRFF430 | 2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET IRFF430
Data Sheet March 1999 File Number 1894.4
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc |
Intersil Corporation |
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2 | IRFF430 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) PD -90433C
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
Product Summary
Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A
IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-PRF-19500/557 500V, N-CHANNEL
The HEXFET technology is the key to International Rectifier |
International Rectifier |
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1 | IRFF430 | Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39 |
New Jersey Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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