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IRFF430 Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
3 IRFF430   2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET

IRFF430 Data Sheet March 1999 File Number 1894.4 2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc
Intersil Corporation
Intersil Corporation
datasheet IRFF430 pdf
2 IRFF430   HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

PD -90433C REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number IRFF430 BVDSS 500V RDS(on) 1.5Ω ID 2.5A  IRFF430 JANTX2N6802 JANTXV2N6802 REF:MIL-PRF-19500/557 500V, N-CHANNEL The HEXFET technology is the key to International Rectifier
International Rectifier
International Rectifier
datasheet IRFF430 pdf
1 IRFF430   Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39

New Jersey Semiconductor
New Jersey Semiconductor
datasheet IRFF430 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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