|
|
Datasheet IRFF420 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFF420 | N-CHANNEL POWER MOSFET IRFF420
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
N–CHANNEL POWER MOSFET
BVDSS ID(cont) RDS(on) 500V 1.5 3.0W
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
1 2 .7 0 (0 .5 0 0 ) m in .
0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 |
 Seme LAB |
 |
| 2 | IRFF420 | 1.6A/ 500V/ 3.000 Ohm/ N-Channel Power MOSFET IRFF420
Data Sheet March 1999 File Number 1891.4
1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch |
 Intersil Corporation |
|
| 1 | IRFF420 | HEXFET TRANSISTORS PD - 90429D
IRFF420
JANTX2N6794
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6794
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
500V, N-CHANNEL
Product Summary
Part Number BVDSS
IRFF420
500V
RDS(on) 3.0Ω
ID 1.5A
The HEXFET®technology is the key to International
Rec |
 International Rectifier |
|
| Esta página es del resultado de búsqueda del IRFF420. Si pulsa el resultado de búsqueda de IRFF420 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |