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Datasheet IRFF210 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRFF210 | 2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET IRFF210
Data Sheet March 1999 File Number 1887.3
2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch |
 Intersil Corporation |
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| 1 | IRFF210 | TRANSISTORS PD-90424D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF210
200V 1.5Ω
ID 2.25A
IRFF210 JANTX2N6784 JANTXV2N6784
REF:MIL-PRF-19500/556
200V, N-CHANNEL
The HEXFET®technology is the key to International
Recti |
 International Rectifier |
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