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Datasheet IRFD9120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRFD9120 | 1.0A/ 100V/ 0.6 Ohm/ P-Channel Power MOSFET IRFD9120
Data Sheet July 1999 File Number
2285.3
1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power |
Intersil Corporation |
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3 | IRFD9120 | Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A) |
International Rectifier |
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2 | IRFD9120 | Power MOSFET ( Transistor ) Power MOSFET
IRFD9120, SiHFD9120
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 100 VGS = - 10 V
18 3.0 9.0 Single
0.60
S
HVMDIP
G
S G
D
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt |
Vishay |
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1 | IRFD9120PbF | Power MOSFET ( Transistor ) Lead-Free
PD- 95919
IRFD9120PbF
www.irf.com
1 10/28/04
IRFD9120PbF
2 www.irf.com
IRFD9120PbF
www.irf.com
3
IRFD9120PbF
4 www.irf.com
IRFD9120PbF
www.irf.com
5
IRFD9120PbF
6 www.irf.com
IRFD9120PbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations • Low Stray In |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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