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Datasheet IRFD220 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFD220 | 0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET IRFD220
Data Sheet July 1999 File Number
2317.3
0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 3 | IRFD220 | Power MOSFET(Vdss=200V/ Rds(on)=0.80ohm/ Id=0.80A) |
 International Rectifier |
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| 2 | IRFD220 | 0.8A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET IRFD220
Data Sheet January 2002
0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operati |
 Fairchild Semiconductor |
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| 1 | IRFD220PBF | Power MOSFET ( Transistor )
PD- 95917
IRFD220PbF
Lead-Free
www.irf.com
1
10/27/04
IRFD220PbF
2
www.irf.com
IRFD220PbF
www.irf.com
3
IRFD220PbF
4
www.irf.com
IRFD220PbF
www.irf.com
5
IRFD220PbF
6
www.irf.com
IRFD220PbF
Peak Diode Recovery dv/dt Test Circuit
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Circuit Layout Considera |
International Rectifier |
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