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Datasheet IRFD110 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRFD110 | 1A/ 100V/ 0.600 Ohm/ N-Channel Power MOSFET IRFD110
Data Sheet July 1999 File Number
2314.3
1A, 100V, 0.600 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m |
Intersil Corporation |
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2 | IRFD110 | Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A) |
International Rectifier |
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1 | IRFD110PBF | HEXFET Power MOSFET PD- 95927
IRFD110PbF
Lead-Free
www.irf.com
1
10/27/04
IRFD110PbF
2
www.irf.com
IRFD110PbF
www.irf.com
3
IRFD110PbF
4
www.irf.com
IRFD110PbF
www.irf.com
5
IRFD110PbF
6
www.irf.com
IRFD110PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray In |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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