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Datasheet IRFBE30 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
6 IRFBE30   Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)

International Rectifier
International Rectifier
datasheet IRFBE30 pdf
5 IRFBE30   Power MOSFET ( Transistor )

Power MOSFET IRFBE30, SiHFBE30 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 78 9.6 45 Single D TO-220AB 3.0 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Ratin
Vishay
Vishay
datasheet IRFBE30 pdf
4 IRFBE30L   Power MOSFET ( Transistor )

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 78 9.6 45 Single 3.0 I2PAK (TO-262) D2PAK (TO-263) D G G SD GD S ORDERING INFORMATION Package Lead (Pb)-free and Halogen
Vishay
Vishay
datasheet IRFBE30L pdf
3 IRFBE30LPBF   HEXFET Power MOSFET

PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET® Power MOSFET D VDSS = 800V G S RDS(on) = 3.0Ω ID = 4.1A Description Third Generation HEXFETs fro
International Rectifier
International Rectifier
datasheet IRFBE30LPBF pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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