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Datasheet IRFBE30 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRFBE30 | Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A) |
International Rectifier |
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5 | IRFBE30 | Power MOSFET ( Transistor ) Power MOSFET
IRFBE30, SiHFBE30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
800 VGS = 10 V
78 9.6 45 Single
D
TO-220AB
3.0
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Ratin |
Vishay |
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4 | IRFBE30L | Power MOSFET ( Transistor ) IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
800 VGS = 10 V
78 9.6 45 Single
3.0
I2PAK (TO-262)
D2PAK (TO-263)
D
G
G SD GD S
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen |
Vishay |
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3 | IRFBE30LPBF | HEXFET Power MOSFET
PD - 95507
IRFBE30SPbF IRFBE30LPbF
O O O O O O
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free
HEXFET® Power MOSFET
D
VDSS = 800V
G S
RDS(on) = 3.0Ω ID = 4.1A
Description
Third Generation HEXFETs fro |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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